Why ferromagnetic semiconductors ?

نویسنده

  • Tomasz Dietl
چکیده

Rapid development of information technologies originates from the exponential increase in the density of information that can be processed, stored, and transfer by the unit area of relevant devices. There is, however, a growing amount of evidences that the progress achieved in this way approaches its limits. Various novel ideas put forward to circumvent barriers ahead are described. Particular attention is paid to those concepts which propose to exploit electron or nuclear spins as the information carriers. Here, ferromagnetic semiconductors of III-V or II-VI compounds containing a sizable concentration of transition metals appear as outstanding spintronic materials. PACS: 75.50.Pp, 72.25.Dc, 75.30.Hx, 85.75-d ________ * This paper is based on author’s talks presented at IV International School and Symposium on Physics in Materials, Jaszowiec, Poland, Sept. 23-29, 2001 and at 34th Meeting of Polish Physicists, Toruñ, Sept. 17-20, and published in Postêpy Fizyki 52 (Suppl.) (2001). Translated with permission (Copyright 2001 by Polish Physical Society). **e-mail: [email protected]; URL: http://www.ifpan.edu.pl/SL-2/sl23.html

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Lecture Notes on Semiconductor Spintronics

These informal lecture notes describe the progress in semiconductor spintronics in a historic perspective as well as in a comparison to achievements of spintronics of ferromagnetic metals. After outlining motivations behind spintronic research, selected results of investigations on three groups of materials are presented. These include non-magnetic semiconductors, hybrid structures involving se...

متن کامل

Ultrafast Magneto - Optical Spectroscopy of ( III , Mn ) V Ferromagnetic Semiconductors

Ultrafast Magneto-Optical Spectroscopy of (III,Mn)V Ferromagnetic Semiconductors

متن کامل

Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor

Large spin-splitting in the conduction band and valence band of ferromagnetic semiconductors, predicted by the influential mean-field Zener model and assumed in many spintronic device proposals, has never been observed in the mainstream p-type Mn-doped ferromagnetic semiconductors. Here, using tunnelling spectroscopy in Esaki-diode structures, we report the observation of such a large spontaneo...

متن کامل

Spin-Wave Resonance Model of Surface Pinning in Ferromagnetic Semiconductor (Ga,Mn)As Thin Films

The source of spin-wave resonance (SWR) in thin films of the ferromagnetic semiconductor (Ga,Mn)As is still under debate: does SWR stem from the surface anisotropy (in which case the surface inhomogeneity (SI) model would apply), or does it originate in the bulk inhomogeneity of the magnetic structure of the sample (and thus requires the use of the volume inhomogeneity (VI) model)? This paper o...

متن کامل

خواص مغناطیسی نانولوله گالیوم آرسناید زیگزاگ (0,9) آلایش‌یافته با عناصر واسطه

of 3d transition metals (Sc, Ti, Cr, Mn , Fe, Co, Ni) in both far and close situations were studied based on spin polarised density functional theory using the generalized gradient approximation (LDA) with SIESTA code. The electronic structures show that zigzag (0,9) GaAs nanotubes are non-magnetic semiconductors with direct band gap. It was revealed that doping of 11.11 % Fe and Mn concentrati...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2002